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Datasheet MJE210 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | MJE210 | COMPLEMENTARY SILICON POWER TRANSISTORS MJE200 NPN MJE210 PNP
COMPLEMENTARY SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE210 types are complementary silicon transistors designed for high gain amplifier applications.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS |
 Central Semiconductor |
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| 9 | MJE210 | SILICON PNP TRANSISTOR MJE210
SILICON PNP TRANSISTOR
s s
SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR
DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain aydio amplifier applications.
3 2 1
SOT-32
INTERNAL SCHEMATIC DIAGRAM |
 ST Microelectronics |
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| 8 | MJE210 | PNP (COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER) |
 Samsung |
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| 7 | MJE210 | Feature MJE210
MJE210
Feature
• Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.) • Complement to MJE200
1
TO-126 2.Collector 3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbo |
 Fairchild |
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