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Datasheet MJ3055 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1MJ3055Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification MJ3055 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS ·Designed for general-purpose switching an
Inchange Semiconductor
Inchange Semiconductor
transistor
2MJ3055Bipolar NPN Device

MJ3055 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.1
Seme LAB
Seme LAB
data


MJ3 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1MJ3000Silicon NPN Power Transistors

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification MJ3000/3001 DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ2500/2501 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications PINNING(see F
SavantIC
SavantIC
datasheet MJ3000 pdf
2MJ3000Silicon complementary trasistors

Central Semiconductor
Central Semiconductor
datasheet MJ3000 pdf
3MJ300010 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ2500/D MJ2955 (See 2N3055) MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 MJ2501* NPN PNP ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ�
Motorola Semiconductors
Motorola Semiconductors
datasheet MJ3000 pdf
4MJ3000(MJ3000 / MJ3001) NPN Transistor

PNP MJ3000 – MJ3001 COMPLEMENTARY POWER DARLINGTONS The MJ3000, and MJ3001 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary PNP
Comset Semiconductors
Comset Semiconductors
datasheet MJ3000 pdf
5MJ3000Bipolar NPN Device

MJ3000 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.1
Semelab PLC
Semelab PLC
datasheet MJ3000 pdf
6MJ3000(MJ3000 / MJ3001) Complementary Silicon Power Darlington Transistors

DataShe e DataSheet4U.com DataSheet4U.com DataSheet4U.com DataSheet 4 U .com DataSheet4U.com et4U.com DataShe e DataSheet4U.com DataSheet4U.com DataSheet 4 U .com et4U.com DataSheet4U.com DataSheet4U.com DataSheet4U.com Dat
ST Microelectronics
ST Microelectronics
datasheet MJ3000 pdf
7MJ3000(MJ3000 / MJ3001) COMPLEMENTARY POWER DARLINGTONS

PNP MJ3000 – MJ3001 COMPLEMENTARY POWER DARLINGTONS The MJ3000, and MJ3001 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary PNP
Comset Semiconductors
Comset Semiconductors
datasheet MJ3000 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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