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Datasheet MIP0224SY Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MIP0224SY | Silicon MOS IC Intelligent Power Devices (IPDs)
MIP0221SY, MIP0222SY, MIP0223SY, MIP0224SY, MIP0225SY, MIP0226SY, MIP0227SY
Silicon MOS IC
s Features
q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurr |  Panasonic Semiconductor | data |
| 2 | MIP0224SY | (MIP0xxxSY) Second Generation Three Terminal Package Intelligent Power Device Series w
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|  Panasonic | data |
MIP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MIP0040MS | Silicon MOSFET type Integrated Circuit MIP0040MS
Type Application Structure Equivalent Circuit Out Line
Silicon MOSFET type Integrated Circuit
For Switching Power Supply Control
CMOS type
Figure 8
DIP7-A1
Marking
A. ABSOLUTE MAXIMUM RATINGS (Ta= 25°C±3°C)
No. Item Symbol
1 VIN Voltage 2 VCC Voltage 3 VDD Voltage 4 OUT Voltag Panasonic mosfet | | |
| 2 | MIP0122SY | (MIP0xxxSY) Second Generation Three Terminal Package Intelligent Power Device Series w
w
a D . w
S a t
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U 4 t
m o .c
w
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U 4 t e
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m o
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w
w
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S a t
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Panasonic data | | |
| 3 | MIP0123SY | (MIP0xxxSY) Second Generation Three Terminal Package Intelligent Power Device Series w
w
a D . w
S a t
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U 4 t
m o .c
w
w
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U 4 t e
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m o
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w
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S a t
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m o .c
Panasonic data | | |
| 4 | MIP0124SY | (MIP0xxxSY) Second Generation Three Terminal Package Intelligent Power Device Series w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
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U 4 t e
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w
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Panasonic data | | |
| 5 | MIP0125SY | (MIP0xxxSY) Second Generation Three Terminal Package Intelligent Power Device Series w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
.D w
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U 4 t e
.c
m o
w
w
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S a t
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Panasonic data | | |
| 6 | MIP0129SY | (MIP0xxxSY) Second Generation Three Terminal Package Intelligent Power Device Series w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
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w
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U 4 t
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Panasonic data | | |
| 7 | MIP0210SP | Silicon MOS IC Intelligent Power Devices (IPDs)
MIP0210SP
Silicon MOS IC
s Features
q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integra Panasonic Semiconductor data | | |
| 8 | MIP0210SY | Silicon MOS IC Intelligent Power Devices (IPDs)
MIP0210SY
Silicon MOS IC
s Features
q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integra Panasonic Semiconductor data | | |
| 9 | MIP0221SY | Silicon MOS IC Intelligent Power Devices (IPDs)
MIP0221SY, MIP0222SY, MIP0223SY, MIP0224SY, MIP0225SY, MIP0226SY, MIP0227SY
Silicon MOS IC
s Features
q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurr Panasonic Semiconductor data | |
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