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Datasheet MHW8222 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MHW8222 | 22 dB GAIN 750/860 MHz 110/128 CHANNEL CATV AMPLIFIERS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHW7222/D
The RF Line 110-Channel (750 MHz) and 128-Channel (860 MHz) CATV Amplifiers
The MHW7222 and MHW8222 are designed specifically for up to 860 MHz CATV systems as amplifiers in trunk and line extender applications. These amplifie |  Motorola Semiconductors | amplifier |
| 2 | MHW8222B | CATV Amplifier Module Freescale Semiconductor Technical Data
Replaced by MHW8222BN. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part.
Document Number: MHW8222B Rev. 5, 4/2006
CATV Amplifier Module
Features • Specified for 77 - , 110 - and 128 - Channel Load |  Freescale Semiconductor | amplifier |
MHW Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | MHW10186N | Gallium Arsenide CATV Amplifier Module Freescale Semiconductor Technical Data
Document Number: MHW10186N Rev. 0, 11/2006
Gallium Arsenide CATV Amplifier Module
Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology � Freescale Semiconductor  | ||
| 2 | MHW10188AN | Gallium Arsenide CATV Amplifier Module Freescale Semiconductor Technical Data
Document Number: MHW10188AN Rev. 0, 11/2006
Gallium Arsenide CATV Amplifier Module
Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection • Ga Freescale Semiconductor | ||
| 3 | MHW10236N | Gallium Arsenide CATV Amplifier Module Freescale Semiconductor Technical Data
Document Number: MHW10236N Rev. 0, 11/2006
Gallium Arsenide CATV Amplifier Module
Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Integrated ESD Protection Diodes • GaAs FET Transistor Technology � Freescale Semiconductor | ||
| 4 | MHW10247AN | Gallium Arsenide CATV Amplifier Module Freescale Semiconductor Technical Data
Document Number: MHW10247AN Rev. 0, 7/2006
Gallium Arsenide CATV Amplifier Module
Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection • GaA Freescale Semiconductor | ||
| 5 | MHW10276N | Gallium Arsenide CATV Amplifier Module Freescale Semiconductor Technical Data
Document Number: MHW10276N Rev. 0, 7/2006
LIFETIME BUY
Features • 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Integrated ESD Protection Diodes • GaAs FET Transistor Technology • Unconditionally S Freescale Semiconductor | ||
| 6 | MHW105 | Hybrid Power Module MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHW105/D
VHF Power Amplifier
The MHW105 is designed specifically for portable radio applications. The MHW105 is capable of 5.0 watts power output, operates from a 7.5 volt supply and requires only 1.0 mW of RF input power. � Motorola Semiconductors | ||
| 7 | MHW1134 | Low Distortion Wideband Amplifiers MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHW1134/D
Low Distortion Wideband Amplifiers
. . . designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and high–split 2–way ca Motorola Semiconductors |
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