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Datasheet MGP7N60ED Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MGP7N60ED | Insulated Gate Bipolar Transistor withr Anti-Parallel Diode MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGP7N60ED/D
™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Designer's
MGP7N60ED
IGBT & DIODE IN TO–220 7.0 A @ 90°C 10 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON–VOLTAGE
N–Channel Enhancement–Mo |  ON | transistor |
MGP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | MGP11N60E | Insulated Gate Bipolar Transistor MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGP11N60E/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–bl  Motorola Semiconductors  | ||
| 2 | MGP11N60E | SHORT CIRCUIT RATED LOW ON-VOLTAGE MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGP11N60E/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–bl ON | ||
| 3 | MGP11N60ED | SHORT CIRCUIT RATED LOW ON-VOLTAGE MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGP11N60ED/D
™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Designer's
MGP11N60ED
IGBT & DIODE IN TO–220 11 A @ 90°C 15 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON–VOLTAGE
N–Channel Enhancement–M ON | ||
| 4 | MGP14N60E | Insulated Gate Bipolar Transistor MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGP14N60E/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–bl Motorola Semiconductors | ||
| 5 | MGP14N60E | SHORT CIRCUIT RATED LOW ON-VOLTAGE MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGP14N60E/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–bl ON | ||
| 6 | MGP15N35CL | Internally Clamped N-Channel IGBT MGP15N35CL, MGB15N35CL, MGC15N35CL Internally Clamped N-Channel IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fue ON | ||
| 7 | MGP15N38CL | Internally Clamped N-Channel IGBT MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGP15N38CL/D
Product Preview
Internally Clamped N-Channel IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate Collector Over– Voltage Protection from monolithic circuitry for us ON |
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