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Datasheet MBRS1100T3 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | MBRS1100T3 | Schottky Power Rectifier(Surface Mount Power Package) MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBRS1100T3/D
Schottky Power Rectifier
Surface Mount Power Package
Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epi |
 Motorola Semiconductors |
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| 3 | MBRS1100T3 | 1 Amp Schottky Rectifier |
 Microsemi Corporation |
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| 2 | MBRS1100T3 | Schottky Power Rectifier MBRS1100T3, MBRS190T3
Preferred Devices
Schottky Power Rectifier
Surface Mount Power Package
Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and |
 ON Semiconductor |
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| 1 | MBRS1100T3G | Schottky Power Rectifier MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G
Schottky Power Rectifier
Surface Mount Power Package
Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passi |
ON Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
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