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Datasheet MBRF2050 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
11 | MBRF2050 | Schottky Barrier Rectifiers Production specification
Schottky Barrier Rectifiers
MBRF2020---MBRF20100
FEATURES
z High surge capacity.
z For use in low voltage,high frequency
Pb
Lead-free Inverters,free wheeling,and polarity protect-
tion applications.
z Metal silicon junction,majority carrier conduction.
z High curre |
Galaxy Microelectronics |
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10 | MBRF2050 | Isolated 20.0 AMPS. Schottky Barrier Rectifiers MBRF2035 - MBRF20150
Isolated 20.0 AMPS. Schottky Barrier Rectifiers ITO-220AC
.185(4.7) .173(4.4)
.124(3.16) .118(3.00)
.406(10.3) .390(9.90)
.134(3.4)DIA .113(3.0)DIA
.112(2.85) .100(2.55)
Features
Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon juncti |
Taiwan Semiconductor |
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9 | MBRF2050CT | Dual Common-Cathode Schottky Rectifier MBR(F,B)2035CT thru MBR(F,B)2060CT
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
TO-220AB
ITO-220AB
MBR20xxCT
PIN 1
PIN 2
PIN 3
CASE
3 2 1
TO-263AB K
3 2 1 MBRF20xxCT
PIN 1
PIN 2
PIN 3
2
1
MBRB20xxCT
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV) VRR |
Vishay |
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8 | MBRF2050CT | Schottky Barrier Rectifiers Production specification
Schottky Barrier Rectifiers MBRF2030CT---MBRF20100CT
FEATURES
z High surge capacity.
z For use in low voltage,high frequency
Pb
Lead-free Inverters,free wheeling,and polarity protect-
tion applications.
z Metal silicon junction,majority carrier conduction.
z High cu |
Galaxy Microelectronics |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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