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Datasheet MBRF10H150CT Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
6 | MBRF10H150CT | Dual Schottky Barrier Rectifier MBRF10H150CT
PRV : 150 Volts Io : 10 Ampere
FEATURES :
* Guarding for overvoltage protection * High frequency operation * Low forward voltage drop * Low power loss, high efficiency * RoHS Compliant
MECHANICAL DATA :
* Case : Epoxy, Molded * Lead Temperature for Soldering Purposes:
260°C Max. for 10 |
EIC |
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5 | MBRF10H150CT | Schottky Barrier Rectifier ( Diode ) Schottky Barrier Rectifier
INCHANGE Semiconductor
MBRF10H150CT
FEATURES ·Schottky barrier chip ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and rel |
Inchange Semiconductor |
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4 | MBRF10H150CT | Schottky Barrier Rectifiers MBRF10H100CT-MBRF10H200CT
Isolated 10.0AMP.Schottky Barrier Rectifiers
ITO-220AB
Features
Plastic material used carries Underwriters Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward |
LGE |
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3 | MBRF10H150CT | Dual Common Cathode Schottky Rectifier MBRF10H100CT thru MBRF10H200CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and in a |
Taiwan Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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