Datasheet MBR330NG Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MBR330NG	(MBR320NG - MBR3200NG) 3.0A Leaded Type Schottky Barrier Rectifiers Schottky Barrier Rectifier MBR320NG THRU MBR3100NG 3.0A Leaded Type Schottky Barrier Rectifiers - 20V-200V Features • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardr	American First Semiconductor

MBR33 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MBR330	Axial Lead Rectifiers MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBR320/D Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation a	Motorola Semiconductors
MBR330	Schottky Barrier Rectifier ( Diode ) DIP Type Schottky Barrier Rectifier MBR320 ~ MBR3100 TransDisiotodress Ƶ Features ƽ Metal silicon junction, majority carrier conduction ƽ Low power loss, high efficiency ƽ High forward surge current capability DO-201AD 0.210 (5.3) 0.190 (4.8) DIA. 1.0 (25.4) MIN. 0.375	Kexin
MBR330P	(MBR3xxP) Axial Lead Rectifiers	Motorola Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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