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Datasheet MBR30H100CT Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | MBR30H100CT | Schottky Barrier Rectifier ( Diode ) Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR30H100CT
FEATURES ·Low forward voltage ·Low power loss,high efficiency ·High surge capability ·175℃ operating junction temperature ·Pb-Free Package is Available ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
per |
 Inchange Semiconductor |
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| 4 | MBR30H100CT | Dual Common Cathode Schottky Rectifier MBR30H100CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability
- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free accordin |
 Taiwan Semiconductor |
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| 3 | MBR30H100CT | Power Schottky Rectifier ELECTRONIC
MBR30H100CT
Power Schottky Rectifier - 30Amp 100Volt
□ Features
-Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity -Low power loss, high efficiency -E |
 Sirectifier |
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| 2 | MBR30H100CT | Dual Common Cathode High Voltage Schottky Rectifier www.vishay.com
MBR30H90CT, MBR30H100CT
Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
3 2 1
MBR30H90CT, MBR30H100CT
PIN 1
PIN 2
PIN 3
CASE
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
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 Vishay Siliconix |
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| Número de pieza | Descripción | Fabricantes | |
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