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Datasheet MBM29DL322TD Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | MBM29DL322TD | (MBM29DL32xBD) 32M (4M X 8/2M X 16) BIT Dual Operation FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20873-4E
FLASH MEMORY
CMOS
32M (4M × 8/2M × 16) BIT
Dual Operation
MBM29DL32XTD/BD
s FEATURES
-80/90/12
• 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Tab |
Fujitsu Media Devices |
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3 | MBM29DL322TD-12 | 32M (4M x 8/2M x 16) BIT Dual Operation FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20873-4E
FLASH MEMORY
CMOS
32M (4M × 8/2M × 16) BIT Dual Operation
MBM29DL32XTD/BD -80/90/12
s FEATURES
• 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank sizes (Refer to Table |
Fujitsu |
|
2 | MBM29DL322TD-80 | 32M (4M x 8/2M x 16) BIT Dual Operation FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20873-4E
FLASH MEMORY
CMOS
32M (4M × 8/2M × 16) BIT Dual Operation
MBM29DL32XTD/BD -80/90/12
s FEATURES
• 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank sizes (Refer to Table |
Fujitsu |
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1 | MBM29DL322TD-90 | 32M (4M x 8/2M x 16) BIT Dual Operation FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20873-4E
FLASH MEMORY
CMOS
32M (4M × 8/2M × 16) BIT Dual Operation
MBM29DL32XTD/BD -80/90/12
s FEATURES
• 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank sizes (Refer to Table |
Fujitsu |
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Número de pieza | Descripción | Fabricantes | |
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