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Datasheet MBM29DL163BE Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | MBM29DL163BE | (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20880-1E
FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT
MBM29DL16XTE/BE -70/90/12
s FEATURES
Dual Operation
• 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank |
 Fujitsu Media Devices |
 |
| 4 | MBM29DL163BE | (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20880-1E
FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT
MBM29DL16XTE/BE -70/90/12
s FEATURES
Dual Operation
• 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank |
Fujitsu Media Devices |
|
| 3 | MBM29DL163BE-12 | 16M (2M x 8/1M x 16) BIT Dual Operation
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20880-1E
FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT Dual Operation
MBM29DL16XTE/BE -70/90/12
s FEATURES
• 0.23 µm Process Technology
• Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank |
 Fujitsu |
|
| 2 | MBM29DL163BE-70 | 16M (2M x 8/1M x 16) BIT Dual Operation
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20880-1E
FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT Dual Operation
MBM29DL16XTE/BE -70/90/12
s FEATURES
• 0.23 µm Process Technology
• Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank |
Fujitsu |
|
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