| P/N |
Descripción |
Fabr. |
PDF |
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LD274 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
LD 274
Area not flat 0.6 0.4
2.54 mm spacing 0.8 0.4
9.0 8.2 7.8 7.5
ø5.1 ø4.8
5.9 5.5
Approx. weight 0.5 g
Maße in mm, wenn nicht anders angegeben, Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q Sehr enger Abstrahlwinkel q GaAs-IR-LED, hergestellt im q q q q
Features
q Extremely narrow half angle q GaAs infrared emitti
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 |
 |
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LD274-2 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
LD 274
Area not flat 0.6 0.4
2.54 mm spacing 0.8 0.4
9.0 8.2 7.8 7.5
ø5.1 ø4.8
5.9 5.5
Approx. weight 0.5 g
Maße in mm, wenn nicht anders angegeben, Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q Sehr enger Abstrahlwinkel q GaAs-IR-LED, hergestellt im q q q q
Features
q Extremely narrow half angle q GaAs infrared emitti
|
 |
 |
|
LD274-3 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
LD 274
Area not flat 0.6 0.4
2.54 mm spacing 0.8 0.4
9.0 8.2 7.8 7.5
ø5.1 ø4.8
5.9 5.5
Approx. weight 0.5 g
Maße in mm, wenn nicht anders angegeben, Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q Sehr enger Abstrahlwinkel q GaAs-IR-LED, hergestellt im q q q q
Features
q Extremely narrow half angle q GaAs infrared emitti
|
 |
 |