Datasheet KTD1414 Equivalent ( PDF ) - Transistor

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification KTD1414 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 1A, VCE= 2V APPLICATIONS ·Switching applications ·Hammer driver,pulse motor driver applications ·Power am

SEMICONDUCTOR TECHNICAL DATA KTD1414 EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES High DC Current Gain : hFE=2000(Min.) at VCE=2V, IC=1A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Tempe

KTD-LM, 8, , 16, , 32, and , 64 Memory Upgrade Module Kits for Dell® Latitude LM Series Introduction: Kingston Technology® manufactures four memory module kits for Dell ® Latitude LM Series: KTD-LM, 8 (8MB), KTD-LM, 16 (16MB), KTD-LM, 32 (32MB) and KTD-LM, 64 (64MB). Each memory upgrade kit cont

KTD-LM, 8, , 16, , 32, and , 64 Memory Upgrade Module Kits for Dell® Latitude LM Series Introduction: Kingston Technology® manufactures four memory module kits for Dell ® Latitude LM Series: KTD-LM, 8 (8MB), KTD-LM, 16 (16MB), KTD-LM, 32 (32MB) and KTD-LM, 64 (64MB). Each memory upgrade kit cont

J BL E SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES High DC Current Gain : hFE=800 3200. (VCE=5.0V, IC=300mA). Wide Area of Safe Operation. Low Collector Saturation Voltage : VCE(sat)=0.17V (IC=500mA, IB=5.0mA). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collecto

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES High DC Current Gain : hFE=800 3200 (VCE=5.0V, IC=300mA). Wide Area of Safe Operation. Low Collector Saturation Voltage. : VCE(sat)=0.17V (IC=500mA, IB=5.0mA). KTD1028 EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTER