Datasheet KTD1304 Equivalent ( PDF ) - Transistor

KTD1304 Rev.E Mar.-2016 DATA SHEET 描述 , Descriptions SOT-23 塑封封 NPN 半 三 管。Silicon NPN transistor in a SOT-23 Plastic Package.  特征 , Features E-B 反向 穿 高，反向放大高， 通 阻低。 High VEBO, high reverse hFE, low on resistance.  用途 , Applications 用于音 音 路 Audio muting application. 部等效 路 , Equivalent Circuit 引脚排列 ,

NPN Silicon Epitaxial Planar Transistor FEATURES - High emitter-base voltage. - High reverse hFE. - Low on resistance. Pb Lead-free APPLICATIONS - Audio muting application. Production specification KTD1304 ORDERING INFORMATION Type No. Marking KTD1304 MAX SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Volta

KTD31 04 TRANSISTOR (NPN) SOT-23 FEATURES ·High emitter-base voltage ·low on resistance MARKING: MAX 1. BASE 2. EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temper

SMD Type NPN Transistors KTD1304 (KTD1304S) Transistors - Features ● High Emitter-Base Voltage :VEBO = 12V(Min) ● High Reverse hFE ● Low on Resistance +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 - Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emit

Plastic-Encapsulate Transistors FEATURES High emitter-base voltage low on resistance Marking: MAX Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Value 25 20 12 300 0.2 150 -55to

KTD-LM, 8, , 16, , 32, and , 64 Memory Upgrade Module Kits for Dell® Latitude LM Series Introduction: Kingston Technology® manufactures four memory module kits for Dell ® Latitude LM Series: KTD-LM, 8 (8MB), KTD-LM, 16 (16MB), KTD-LM, 32 (32MB) and KTD-LM, 64 (64MB). Each memory upgrade kit cont

KTD-LM, 8, , 16, , 32, and , 64 Memory Upgrade Module Kits for Dell® Latitude LM Series Introduction: Kingston Technology® manufactures four memory module kits for Dell ® Latitude LM Series: KTD-LM, 8 (8MB), KTD-LM, 16 (16MB), KTD-LM, 32 (32MB) and KTD-LM, 64 (64MB). Each memory upgrade kit cont

J BL E SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES High DC Current Gain : hFE=800 3200. (VCE=5.0V, IC=300mA). Wide Area of Safe Operation. Low Collector Saturation Voltage : VCE(sat)=0.17V (IC=500mA, IB=5.0mA). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collecto

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES High DC Current Gain : hFE=800 3200 (VCE=5.0V, IC=300mA). Wide Area of Safe Operation. Low Collector Saturation Voltage. : VCE(sat)=0.17V (IC=500mA, IB=5.0mA). KTD1028 EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTER