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Datasheet KTD1302 Equivalent ( PDF ) - Transistor |
N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
1 | KTD1302 | TRANSISTOR KTD1302
TRANSISTOR (NPN)
FEATURES - Small Flat Package - Audio Muting Application - High Emitter-Base Voltage
SOT-89-3L
1. BASE 2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Ju
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![]() Jin Yu Semiconductor |
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2 | KTD1302 | TRANSISTOR Product specification
KTD1302
SOT-89
Unit:mm
1.50 ±0.1
- Features
● Collector Power Dissipation: PC=500mW ● Collector Current: IC=300mA
4.50±0.1 1.80±0.1
1
0.48±0.1
2
3
0.80±0.1 0.44±0.1
0.53±0.1
3.00±0.1
0.40±0.1
2.60±0.1
2.50±0.1 4.00±0.1
1.Base 2.Collector 3.Emitter
- Absolute Maximum Ratings Ta = 25℃
Parameter Collector-base voltage Collector-Emitter voltage Emit
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![]() TY Semiconductor |
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3 | KTD1302 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
AUDIO MUTING APPLICATION.
FEATURES High Emitter-Base Voltage : VEBO=12V(Min.). High Reverse hFE
: Reverse hFE=20(Min.) (VCE=2V, IC=4mA). Low on Resistance :RON=0.6 (Typ.) (IB=1mA).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction
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![]() KEC |
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4 | KTD1302 | NPN Transistors SMD Type
NPN Transistors KTD1302
Transistors
- Features
● Small Flat Package ● Audio Muting Application ● High Emitter-Base Voltage
1.70 0.1
0.42 0.1
0.46 0.1
1.Base 2.Collector 3.Emitter
- Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resista
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![]() Kexin |
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KTD Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | KTD-LM16 | Memory Upgrade Module Kits for Dell Latitude LM Series
KTD-LM, 8, , 16, , 32, and , 64 Memory Upgrade Module Kits for Dell® Latitude LM Series Introduction:
Kingston Technology® manufactures four memory module kits for Dell ® Latitude LM Series: KTD-LM, 8 (8MB), KTD-LM, 16 (16MB), KTD-LM, 32 (32MB) and KTD-LM, 64 (64MB). Each memory upgrade kit cont
| ![]() ETC |
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2 | KTD-LM32 | Memory Upgrade Module Kits for Dell Latitude LM Series
| ![]() ETC |
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3 | KTD-LM64 | Memory Upgrade Module Kits for Dell Latitude LM Series
KTD-LM, 8, , 16, , 32, and , 64 Memory Upgrade Module Kits for Dell® Latitude LM Series Introduction:
Kingston Technology® manufactures four memory module kits for Dell ® Latitude LM Series: KTD-LM, 8 (8MB), KTD-LM, 16 (16MB), KTD-LM, 32 (32MB) and KTD-LM, 64 (64MB). Each memory upgrade kit cont
| ![]() ETC |
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4 | KTD-LM8 | Memory Upgrade Module Kits for Dell Latitude LM Series
| ![]() ETC |
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5 | KTD1003 | EPITAXIAL PLANAR NPN TRANSISTOR
J
BL E
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES High DC Current Gain
: hFE=800 3200. (VCE=5.0V, IC=300mA). Wide Area of Safe Operation. Low Collector Saturation Voltage
: VCE(sat)=0.17V (IC=500mA, IB=5.0mA).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collecto
| ![]() KEC |
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6 | KTD1028 | EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES High DC Current Gain : hFE=800 3200 (VCE=5.0V, IC=300mA). Wide Area of Safe Operation. Low Collector Saturation Voltage. : VCE(sat)=0.17V (IC=500mA, IB=5.0mA).
KTD1028
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTER
| ![]() KEC |
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7 | KTD1028V | EPITAXIAL PLANAR NPN TRANSISTOR
| ![]() KEC |
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Número de pieza | Descripción | Fabricantes | |
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