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Datasheet KTC4076 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | KTC4076 | NPN Transistor RoHS KTC4076
KTC4076 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM: 100 mW (Tamb=25℃)
1. 01 REF
.,LCollector current
0. 30 2. 00¡ À0. 05
ICM: 500 Collector-base voltage
mA
OV(BR)CBO:
35 V
1. 30¡ À0. 03
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150 |
WEJ |
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4 | KTC4076 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES ᴌExcellent hFE Linearity
: hFE(2)=25(Min.) at VCE=6V, IC=400mA. ᴌComplementary to KTA2015.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base V |
KEC |
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3 | KTC4076 | NPN Transistor KTC4076
TRANSISTOR (NPN)
FEATURES Excellent hFE Linearity Complementary to KTA2015
SOT–323
APPLICATIONS General Purpose Switching
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
35
VCEO Collector-Emitter Voltage
30
VEBO |
Jin Yu Semiconductor |
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2 | KTC4076 | NPN Transistors SMD Type
NPN Transistors KTC4076
Transistors
■ Features
● Excellent hFE Linearity ● Complementary to KTA2015
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Base Current Collector P |
Kexin |
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Número de pieza | Descripción | Fabricantes | |
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