Datasheet KTA1663 Equivalent ( PDF ) - Transistor

RoHS KTA1663 KTA1663 TRANSISTOR (PNP) DFEATURES Power dissipation TPCM: 0.5 W (Tamb=25℃) Collector current .,LICM: -1.5 Collector-base voltage A V(BR)CBO: -35 V Operating and storage junction temperature range OTJ, Tstg: -55℃ to +150℃ 1 2 3 SOT-89 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER CELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) ICParameter Symbol T

J BH E SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES 1W (Mounted on Ceramic Substrate). Small Flat Package. Complementary to KTC4375. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -30 Collector-Emitter Voltage VCEO -30 Emitter-Base Voltage VEBO -5 Collector Current IC -1.5 Base Current IB -0.3 Collector Power Dissipation PC 50

PNP Epitaxial Planar Transistors P b Lead(Pb)-Free ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PD Tj Tstg KTA1663 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 Limits -35 -30 -5.0 -1.5 0.5 -55 to +150 -55 to

KTA1663 TRANSISTOR (PNP) FEATURES - High current applications - Complementary to KTC4375 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -30 -30 -5 -1.5 500 150 -55-150 Un