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Datasheet KDV245E Equivalent ( PDF ) - Diode |
| N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
| 1 | KDV245E | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO) SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF Band Radio.
KDV245E
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
High Capacitance Ratio : C0.5V, C2.5V =2.5(Typ.) Low Series Resistance : rs=0.35 Useful for Small Size Tuner. (Typ.)
CATHODE MARK
FEATURES
C 1
E
2 D F
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range
)
SYMBOL VR Tj Tstg R
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.gif){kind=small} KEC(Korea Electronics) |
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KDV Datasheet ( Hoja de datos ) - Resultados que coinciden |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | KDV141E | ESC PACKAGE
SEMICONDUCTOR
MARKING SPECIFICATION
1. Marking method
Laser Marking
KDV141E
ESC PACKAGE
2. Marking
EE
No.
Item Device Mark
Marking EE
Description KDV141E
2003. 10. 24
Revision No : 0
1, 1
|  KEC |
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| 2 | KDV142E | SILICON EPITAXIAL PIN TYPE DIODE
SEMICONDUCTOR
TECHNICAL DATA
For antenna switches in mobile applications. FEATURES
Low Capacitance : CT=0.35[pF] (Max.) Low Series resistance : rS=1.5[ Small Package : ESC. ] (Max.).
CATHODE MARK
C 1
KDV142E
SILICON EPITAXIAL PIN TYPE DIODE
E
2 D F
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Vo
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| 3 | KDV142EL | Silicon Epitaxial Pin Type Diode
SEMICONDUCTOR
TECHNICAL DATA
For antenna switches in mobile applications. FEATURES
Low Capacitance : CT=0.35[pF] (Max.) Low Series resistance : rS=1.3[ Small Package .
2 1
KDV142EL
SILICON EPITAXIAL PIN TYPE DIODE
] (Max.)
A F
E
E
G
B
D
DIM A B C D E F G
G
MAXIMUM RATING (Ta=25
CHARACTERISTI
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| 4 | KDV142V | SILICON EPITAXIAL PIN TYPE DIODE
SEMICONDUCTOR
TECHNICAL DATA
For antenna switches in mobile applications. FEATURES
Low Capacitance : CT=0.35[pF] (Max.) Low Series resistance : rS=1.3[ Small Package : ESC ] (Max.)
2
KDV142V
SILICON EPITAXIAL PIN TYPE DIODE
CATHODE MARK
1
D
C
B A
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse V
| KEC |
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| 5 | KDV1430 | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
| KEC(Korea Electronics) |
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| 6 | KDV143EL | SILICON EPITAXIAL PIN TYPE DIODE
SEMICONDUCTOR
TECHNICAL DATA
For antenna switches in mobile applications. FEATURES
Low Operation Current. Small Package .
1
KDV143EL
SILICON EPITAXIAL PIN TYPE DIODE
2 E A F
J 2 B
I
H 1 D
G
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Tem
| KEC |
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| 7 | KDV143F | For antenna switches
SEMICONDUCTOR
TECHNICAL DATA
For antenna switches in mobile applications. FEATURES
Low Operation Current. Small Package .
2
KDV143F
SILICON EPITAXIAL PIN TYPE DIODE
CATHODE MARK
1
D
C
B A
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temper
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