![]() |
|
Datasheet KDV142E Equivalent ( PDF ) - Diode |
P/N | Descripción | Fabr. | BUY |
KDV142E | SILICON EPITAXIAL PIN TYPE DIODE SEMICONDUCTOR
TECHNICAL DATA
For antenna switches in mobile applications. FEATURES
Low Capacitance : CT=0.35[pF] (Max.) Low Series resistance : rS=1.5[ Small Package : ESC. ] (Max.).
CATHODE MARK
C 1
KDV142E
SILICON EPITAXIAL PIN TYPE DIODE
E
2 D F
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range
)
SYMBOL VR IF Tj Tstg RATING
|
![]() |
![]() |
KDV142EL | Silicon Epitaxial Pin Type Diode SEMICONDUCTOR
TECHNICAL DATA
For antenna switches in mobile applications. FEATURES
Low Capacitance : CT=0.35[pF] (Max.) Low Series resistance : rS=1.3[ Small Package .
2 1
KDV142EL
SILICON EPITAXIAL PIN TYPE DIODE
] (Max.)
A F
E
E
G
B
D
DIM A B C D E F G
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range
)
SYMBOL VR IF Tj
|
![]() |
![]() |
KDV Datasheet ( Hoja de datos ) - Resultados que coinciden |
P/N | Descripción | Fabr. | |
KDV141E | ESC PACKAGE
SEMICONDUCTOR
MARKING SPECIFICATION
1. Marking method
Laser Marking
KDV141E
ESC PACKAGE
2. Marking
EE
No.
Item Device Mark
Marking EE
Description KDV141E
2003. 10. 24
Revision No : 0
1, 1
| ![]() |
![]() |
KDV142E | SILICON EPITAXIAL PIN TYPE DIODE
SEMICONDUCTOR
TECHNICAL DATA
For antenna switches in mobile applications. FEATURES
Low Capacitance : CT=0.35[pF] (Max.) Low Series resistance : rS=1.5[ Small Package : ESC. ] (Max.).
CATHODE MARK
C 1
KDV142E
SILICON EPITAXIAL PIN TYPE DIODE
E
2 D F
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Vo
| ![]() |
![]() |
KDV142EL | Silicon Epitaxial Pin Type Diode
SEMICONDUCTOR
TECHNICAL DATA
For antenna switches in mobile applications. FEATURES
Low Capacitance : CT=0.35[pF] (Max.) Low Series resistance : rS=1.3[ Small Package .
2 1
KDV142EL
SILICON EPITAXIAL PIN TYPE DIODE
] (Max.)
A F
E
E
G
B
D
DIM A B C D E F G
G
MAXIMUM RATING (Ta=25
CHARACTERISTI
| ![]() |
![]() |
KDV142V | SILICON EPITAXIAL PIN TYPE DIODE
SEMICONDUCTOR
TECHNICAL DATA
For antenna switches in mobile applications. FEATURES
Low Capacitance : CT=0.35[pF] (Max.) Low Series resistance : rS=1.3[ Small Package : ESC ] (Max.)
2
KDV142V
SILICON EPITAXIAL PIN TYPE DIODE
CATHODE MARK
1
D
C
B A
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse V
| ![]() |
![]() |
KDV1430 | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
| ![]() |
![]() |
KDV143EL | SILICON EPITAXIAL PIN TYPE DIODE
SEMICONDUCTOR
TECHNICAL DATA
For antenna switches in mobile applications. FEATURES
Low Operation Current. Small Package .
1
KDV143EL
SILICON EPITAXIAL PIN TYPE DIODE
2 E A F
J 2 B
I
H 1 D
G
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Tem
| ![]() |
![]() |
KDV143F | For antenna switches
SEMICONDUCTOR
TECHNICAL DATA
For antenna switches in mobile applications. FEATURES
Low Operation Current. Small Package .
2
KDV143F
SILICON EPITAXIAL PIN TYPE DIODE
CATHODE MARK
1
D
C
B A
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temper
| ![]() |
![]() |
Esta página es del resultado de búsqueda del KDV142E. Si pulsa el resultado de búsqueda de KDV142E se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
P/N | Descripción | Fabr. | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
![]() |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |