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Datasheet K40T120 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Comprar ahora
1K40T120 IGBT, Insulated Gate Bipolar Transistor

FDP52N20 , FDPF52N20T N-Channel MOSFET October 2007 UniFETTM FDP52N20 , FDPF52N20T N-Channel MOSFET 200V, 52A, 0.049Ω Features RDS(on) = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A Low gate charge ( Typ. 49nC) Low Crss ( Typ. 66pF) Fast switching 100% avalanche tested Improve dv, dt capability RoHS compliant tm Description These N-Channel enhancement mode power field effect transistors are
Infineon
Infineon
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2K40T1202 IGBT, Insulated Gate Bipolar Transistor

TrenchStop 2 Generation Series ® nd IKW40N120T2 Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel Emitter Controlled Diode C Best in class TO247 Short circuit withstand time 10 s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® 2nd generation for 1200 V applications offers : - very tight parameter distri
Infineon
Infineon
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K40T120 datasheet igbt


1. IGBT, 1200V, 40A, IKW40T120

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K40 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1 K4003 N-Channel MOSFET, 2SK4003

2SK4003 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π MOS VI) 2SK4003 Chopper Regulator, DC, DC Converter and Motor Drive Applications 6.5±0.2 Unit: mm 1.5±0.2 - Low drain source ON-resistance - Low leakage current - Enhancement mode : RDS (ON) = 1.7 Ω
Toshiba Semiconductor
Toshiba Semiconductor
datasheet K4003 pdf
2 K4004-01MR Power MOSFET, Transistor

This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of
Fuji
Fuji
datasheet K4004-01MR pdf
3 K4005-01MR N-Channel MOSFET, 2SK4005-01MR

This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of
Fuji Electric
Fuji Electric
datasheet K4005-01MR pdf
4 K401 Photocoupler

Photocoupler K401 K402 K404 These Photocouplers consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Photo Darlington transistor per a channel. The K401 has one channel in a 4-pin mini-flat SMD package. The K402 has two channels in a 8-pin mini-flat SMD package. The K404 has
KODENSHI KOREA CORP
KODENSHI KOREA CORP
datasheet K401 pdf
5 K4012 N-Channel MOSFET, 2SK4012

2SK4012 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK4012 Switching Regulator Applications Unit: mm - Low drain source ON-resistance : RDS (ON) = 0.33 Ω (typ.) - High forward transfer admittance : |Yfs| = 8.5 S (typ.) - Low leakage current : IDSS = 100 μA (max
Toshiba Semiconductor
Toshiba Semiconductor
datasheet K4012 pdf
6 K4013 N-Channel MOSFET, 2SK4013

2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK4013 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 640 V) En
Toshiba Semiconductor
Toshiba Semiconductor
datasheet K4013 pdf
7 K4017 N-Channel MOSFET, 2SK4017

2SK4017 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK4017 Chopper Regulator, DC-DC Converter and Motor Drive Applications - 4-V gate drive - Low drain source ON-resistance: RDS (ON) = 0.07 Ω (typ.) - High forward transfer admittance: |Yfs| = 6.0 S (typ.) - Low leakag
Toshiba Semiconductor
Toshiba Semiconductor
datasheet K4017 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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