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Datasheet K40T120 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
1 | K40T120 | IGBT, Insulated Gate Bipolar Transistor FDP52N20 , FDPF52N20T N-Channel MOSFET
October 2007
UniFETTM
FDP52N20 , FDPF52N20T
N-Channel MOSFET
200V, 52A, 0.049Ω Features
RDS(on) = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A Low gate charge ( Typ. 49nC) Low Crss ( Typ. 66pF) Fast switching 100% avalanche tested Improve dv, dt capability RoHS compliant
tm
Description
These N-Channel enhancement mode power field effect transistors are
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2 | K40T1202 | IGBT, Insulated Gate Bipolar Transistor TrenchStop 2 Generation Series
®
nd
IKW40N120T2
Low Loss DuoPack :
IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel Emitter Controlled Diode
C
Best in class TO247 Short circuit withstand time 10 s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® 2nd generation for 1200 V applications offers : - very tight parameter distri
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Descripción y especificaciones del producto |
Muestra la imagen del producto o los pines. ![]() 1. IGBT, 1200V, 40A, IKW40T120 [ Learn More ] |
K40 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | K4003 | N-Channel MOSFET, 2SK4003
2SK4003
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π MOS VI)
2SK4003
Chopper Regulator, DC, DC Converter and Motor Drive Applications
6.5±0.2
Unit: mm
1.5±0.2
- Low drain source ON-resistance - Low leakage current - Enhancement mode
: RDS (ON) = 1.7 Ω
| ![]() Toshiba Semiconductor |
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2 | K4004-01MR | Power MOSFET, Transistor
This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of
| ![]() Fuji |
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3 | K4005-01MR | N-Channel MOSFET, 2SK4005-01MR
This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of
| ![]() Fuji Electric |
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4 | K401 | Photocoupler
Photocoupler
K401 K402 K404
These Photocouplers consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Photo Darlington transistor per a channel. The K401 has one channel in a 4-pin mini-flat SMD package. The K402 has two channels in a 8-pin mini-flat SMD package. The K404 has
| ![]() KODENSHI KOREA CORP |
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5 | K4012 | N-Channel MOSFET, 2SK4012
2SK4012
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK4012
Switching Regulator Applications
Unit: mm
- Low drain source ON-resistance
: RDS (ON) = 0.33 Ω (typ.)
- High forward transfer admittance
: |Yfs| = 8.5 S (typ.)
- Low leakage current
: IDSS = 100 μA (max
| ![]() Toshiba Semiconductor |
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6 | K4013 | N-Channel MOSFET, 2SK4013
2SK4013
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ)
2SK4013
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 640 V) En
| ![]() Toshiba Semiconductor |
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7 | K4017 | N-Channel MOSFET, 2SK4017
2SK4017
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III)
2SK4017
Chopper Regulator, DC-DC Converter and Motor Drive Applications
- 4-V gate drive
- Low drain source ON-resistance: RDS (ON) = 0.07 Ω (typ.) - High forward transfer admittance: |Yfs| = 6.0 S (typ.) - Low leakag
| ![]() Toshiba Semiconductor |
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