Datasheet K246 Equivalent ( PDF ) - Mosfet

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2461 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2461 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 FEATURES Low On-Resistance RDS(on)1 = 80 mΩ MAX. (@ VGS = 10 V, ID = 10 A) 15.0 ±0.3 3 ±0.1 4 ±0.2 12.

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications 2SK246 Unit: mm · High breakdown voltage: VGDS = 50 V · High input impedance: IGSS = 1 nA (max) (VGS = 30 V) Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Juncti

Transistors Small switching (60V, 2A) 2SK2463 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 118 Transistors FElectrical characteristi

Ordering number:ENN6475 N-Channel Silicon MOSFET 2SK2464 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package. Package Dimensions unit:mm 2128 [2SK2464] 8.2 7.8 6.2 3 8.4 10.0 0.4 0.2 0.6 4.2 1.2 1.0 2.54 1 2 1.0

2SK2469-01MR FAP-II Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 300V 1Ω 5A 30W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unle

LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 Conserves battery life Unique manufacturing process Provides lowest reverse leakage currents Low impedance at currents specified at 10 mA and below NOMINAL ZENER VOLTAGE V- @ I- = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 3.9

DO-15X Axial Lead DO-214AA Surface Mount TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected SIDAC (95 - 330 Volts) 9 General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diac

DO-15X Axial Lead DO-214AA Surface Mount TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected SIDAC (95 - 330 Volts) 9 General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diac

DO-15X Axial Lead DO-214AA Surface Mount TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected SIDAC (95 - 330 Volts) 9 General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diac

DO-15X Axial Lead DO-214AA Surface Mount TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected SIDAC (95 - 330 Volts) 9 General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diac

2SK2401 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2401 Chopper Regulator, DC DC Converter and Motor Drive Applications - Low drain source ON resistance : RDS (ON) = 0.13 Ω (typ.) - High forward transfer admittance : |Yfs| = 17 S (typ.) - Low leakage current : IDS

DO-15X Axial Lead DO-214AA Surface Mount TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected SIDAC (95 - 330 Volts) 9 General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diac