Datasheet K2396A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	K2396A	Silicon Power MOS FET N MOS UHF TV MOS Silicon Power MOS Field Effect Transistor 2SK2396A UHF PO = 100 W, GL = 12 dB, h D = 50 TYP VDD = 30 V, f = 860 MHz, IDQ = 150 mA 2, Pin = 40 dBm f = 470 860 MHz Unit mm TA = 25 D.C. VDS VGS ID PT Rth Tch Tstg 60 7 15 290 0.6 200 65 200 V V A W /W TA = 25 IGSS VGS off	Renesas

K23 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
K2333	MOSFET ( Transistor ) - 2SK2333 SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type ( F6F70HVX2 ) 700V 6A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance	Shindengen
K2350	MOSFET ( Transistor ) - 2SK2350 2SK2350 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK2350 Switching Regulator, DC−DC Converter and Motor Drive Applications z 4-V gate drive z Low drain−source ON resistance z High forward transfer admittance z Low leakage current www.Data	Toshiba Semiconductor
K2382	MOSFET ( Transistor ) - 2SK2382 Datasheet.es 2SK2382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2382 Switching Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhanceme	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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