Datasheet J211 Equivalent ( PDF ) - Transistor

DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product speci cation File under Discrete Semiconductors, SC07 1997 Dec 01 Philips Semiconductors Product speci cation N-channel eld-effect transistors FEATURES High speed switching Interchangeability of drain and source connections High impedance. APPLICATIONS Analog switches Choppers, multiplexers an

J210 , J211 , J212 , MMBFJ210 , MMBFJ211 , MMBFJ212 J210 J211 J212 MMBFJ210 MMBFJ211 MMBFJ212 G S G S TO-92 D SOT-23 Mark: 62V , 62W , 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF, VHF mixer, amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from Process

N-Channel JFET CORPORATION J210 J212 , SSTJ210 SSTJ212 FEATURES DESCRIPTION The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage, typically under 2 pA, low noise, under 10 nano volts per square hert- at 10 hert- and high gain. This series is excellent for mixer, oscillators and amplifier a

J210, J211, J212 Linear Integrated Systems LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER TO-92 FEATURES HIGH GAIN gfs = 7000 mho MINIMUM (J211, J212) HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Gate-Drain or Gate-Source Voltage Gate Current Total Device Dissipation @ 25°C Ambient (Derate 3.27 mW

J211 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J211 The J211 is a n-channel JFET General Purpose amplifier with low noise and low leakage. The TO-92 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES DIRECT REPLACEMENT FOR SILICONIX J211 HIGH GAIN gfs = 7000 mho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT