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Datasheet IXGQ28N120B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IXGQ28N120B | High Voltage IGBT High Voltage IGBT with Diode
IXGQ 28N120B IXGQ 28N120BD1
V CES
IC25 VCE(sat)
tfi(typ)
= 1200 V = 50 A = 3.5 V = 160 ns
Symbol
Test Conditions
VCES VCGR
V GES
VGEM
IC25 IC110 ICM
SSOA (RBSOA)
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient
TC = 25°C TC = 110°C TC |
 IXYS |
 |
| 1 | IXGQ28N120BD1 | High Voltage IGBT High Voltage IGBT with Diode
IXGQ 28N120B IXGQ 28N120BD1
V CES
IC25 VCE(sat)
tfi(typ)
= 1200 V = 50 A = 3.5 V = 160 ns
Symbol
Test Conditions
VCES VCGR
V GES
VGEM
IC25 IC110 ICM
SSOA (RBSOA)
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient
TC = 25°C TC = 110°C TC |
IXYS |
|
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