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Datasheet IXFH26N50 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IXFH26N50 | (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching w
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 IXYS Corporation |
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| 3 | IXFH26N50 | (IXFx2xN50) HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs
VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50
ID25
RDS(on)
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
500 V 21 A 0.25 Ω 500 V 24 A 0.23 Ω 500 V 26 A 0.20 Ω trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR
Test Conditions TJ = 25 |
IXYS Corporation |
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| 2 | IXFH26N50P | Avalanche Rated Fast Instrinsic Diode PolarHVTM Power MOSFET
Avalanche Rated Fast Instrinsic Diode
Preliminary Data Sheet
IXFH 26N50P IXFV 26N50P IXFV 26N50PS
VDSS ID25 trr
RDS(on)
= = ≤ ≤
500 V 26 A 230 mΩ 200 ns
Symbol VDSS VDGR
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Co |
IXYS Corporation |
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| 1 | IXFH26N50Q | HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q
ID25
RDS(on) 0.23 Ω 0.20 Ω
500 V 24 A 500 V 26 A trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Condi |
IXYS Corporation |
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