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Datasheet IS61LV12816 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | IS61LV12816 | 128K x 16 HIGH-SPEED CMOS STATIC RAM IS61LV12816
FEATURES
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
High-speed access time: 8, 10, 12, and 15 ns CMOS low power operation TTL and CMOS compatible interface levels Single 3.3V + 10%power supply Fully static operation: no clock or refresh required Three state |
 Integrated Circuit Solution |
 |
| 4 | IS61LV12816 | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY IS61LV12816
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
FEATURES
• • • • • High-speed access time: 8, 10, 12, and 15 ns CMOS low power operation TTL and CMOS compatible interface levels Single 3.3V ± 10% power supply Fully static operation: no clock or refresh required • Three |
 Integrated Silicon Solution |
|
| 3 | IS61LV12816 | 128K x 16 HIGH-SPEED CMOS STATIC RAM IS61LV12816
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
FEATURES
• • • • • High-speed access time: 10, 12, and 15 ns CMOS low power operation TTL and CMOS compatible interface levels Single 3.3V ± 10% power supply Fully static operation: no clock or refresh required • Three st |
 ISSI |
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| 2 | IS61LV12816L | 128K x 16 HIGH-SPEED CMOS STATIC RAM IS61LV12816L
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
ISSI®
OCTOBER 2005
FEATURES
• High-speed access time: 8, 10 ns • Operating Current: 50mA (typ.) • Stand by Current: 700µA (typ.) • TTL and CMOS compatible interface levels • Single 3.3V power supply • Fully static ope |
Integrated Silicon Solution |
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