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Datasheet IRLZ24N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
6 | IRLZ24N | HEXFET POWER MOSFET
PD - 91357C
HEXFET® Power MOSFET
l l l l l l
IRLZ24N
VDSS = 55V
Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
G S
RDS(on) = 0.06Ω ID = 18A
Description
Fifth Generation HEXFETs |
International Rectifier |
|
5 | IRLZ24NL | (IRLZ24NL/S) Power MOSFET
PD - 91358E
IRLZ24NS/L
Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l
HEXFET® Power MOSFET
D
VDSS = 55V RDS(on) = 0.06 |
International Rectifier |
|
4 | IRLZ24NLPBF | (IRLZ24NSPBF / IRLZ24NLPBF) Power MOSFET
Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
HEXFET® Power MOSFET
D
IRLZ24NSPbF IRLZ24NLPbF
VDSS = 55V RD |
International Rectifier |
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3 | IRLZ24NPBF | Power MOSFET ( Transistor )
PD - 94998
IRLZ24NPbF
•
Lead-Free
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IRLZ24N |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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