Datasheet IRL540N Equivalent ( PDF ) - Mosfet

Previous Datasheet Index Next Data Sheet PD - 9.1495 PRELIMINARY l l l l l l IRL540N HEXFET® Power MOSFET D Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 100V RDS(on) = 0.044Ω G S ID = 30A Description Fifth Generation HEXFETs from International Rectifier utilize adv

PD- 95234 IRL540NS, LPbF Lead-Free www.irf.com 1 05, 04, 04 IRL540NS, LPbF 2 www.irf.com IRL540NS, LPbF www.irf.com 3 IRL540NS, LPbF 4 www.irf.com IRL540NS, LPbF www.irf.com 5 IRL540NS, LPbF 6 www.irf.com IRL540NS, LPbF www.irf.com 7 IRL540NS, LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN

Lead-Free PD - 94997 IRL540NPbF HEXFET® Power MOSFET www.irf.com 1 2, 10, 04 IRL540NPbF 2 www.irf.com IRL540NPbF www.irf.com 3 IRL540NPbF 4 www.irf.com IRL540NPbF www.irf.com 5 IRL540NPbF 6 www.irf.com IRL540NPbF www.irf.com 7 IRL540NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.1

PD -91535 IRL540NS, L HEXFET® Power MOSFET Advanced Process Technology l Surface Mount (IRL540NS) l Low-profile through-hole (IRL540NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS = 100V G S RDS(on) = 0.044Ω ID = 36A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resis

PD- 95234 IRL540NS, LPbF Lead-Free www.irf.com 1 05, 04, 04 IRL540NS, LPbF 2 www.irf.com IRL540NS, LPbF www.irf.com 3 IRL540NS, LPbF 4 www.irf.com IRL540NS, LPbF www.irf.com 5 IRL540NS, LPbF 6 www.irf.com IRL540NS, LPbF www.irf.com 7 IRL540NS, LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN

PD - 91702B IRL1004 HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l D VDSS = 40V RDS(on) = 0.0065Ω G ID = 130A S Fifth Generat

PD - 91644A IRL1004S IRL1004L Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l HEXFET® Power MOSFET D VDSS = 40V G S RDS(on) = 0.0065Ω ID = 130A Fift

PD - 95575 Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l IRL1004SPbF IRL1004LPbF HEXFET® Power MOSFET D VDSS = 40V G S RDS(on) = 0.0065Ω

l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing te

PD - 91644A IRL1004S IRL1004L Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l HEXFET® Power MOSFET D VDSS = 40V G S RDS(on) = 0.0065Ω ID = 130A Fift

PD - 95575 Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l IRL1004SPbF IRL1004LPbF HEXFET® Power MOSFET D VDSS = 40V G S RDS(on) = 0.0065Ω

PD -91805 IRL1104 HEXFET® Power MOSFET Logic-Level Gate Drive q Advanced Process Technology q Ultra Low On-Resistance q Dynamic dv, dt Rating q 175°C Operating Temperature q Fast Switching q Fully Avalanche Rated Description q D VDSS = 40V G S RDS(on) = 0.008Ω ID = 104A Fifth Generation