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Datasheet IRL3103 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | IRL3103 | Power MOSFET ( Transistor ) PD - 91337
IRL3103
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 30V RDS(on) = 12mΩ
G S
ID = 64A
Description
Advanced HEXFET® Power MOSFETs from Internati |
 International Rectifier |
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| 10 | IRL3103D1 | MOSFET & SCHOTTKY RECTIFIER PD 9.1608C
IRL3103D1
FETKYTM MOSFET & SCHOTTKY RECTIFIER
l l l l l
Copackaged HEXFET® Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application
D
VDSS = 30V RDS(on) = 0.014Ω
G
ID = 64A
S
Description |
International Rectifier |
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| 9 | IRL3103D1PBF | MOSFET & SCHOTTKY RECTIFIER • Lead-Free
PD - 94936
IRL3103D1PbF
www.irf.com
1 1/12/04
IRL3103D1PbF
2 www.irf.com
IRL3103D1PbF
www.irf.com
3
IRL3103D1PbF
4 www.irf.com
IRL3103D1PbF
www.irf.com
5
IRL3103D1PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113) 2.62 (.103)
10.54 (.41 |
International Rectifier |
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| 8 | IRL3103D1S | MOSFET & SCHOTTKY RECTIFIER PD- 9.1558A
IRL3103D1S
FETKYTM MOSFET & SCHOTTKY RECTIFIER
l l l l l
Co-packaged HEXFET® Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application
D
VDSS = 30V RDS(on) = 0.014Ω
G
ID = 64A
S
Descript |
International Rectifier |
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