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Datasheet IRG4BC30F Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
6 | IRG4BC30F | INSULATED GATE BIPOLAR TRANSISTOR PD - 91450B
IRG4BC30F
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry sta |
International Rectifier |
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5 | IRG4BC30FD | INSULATED GATE BIPOLAR TRANSISTOR PD -91451B
IRG4BC30FD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency |
International Rectifier |
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4 | IRG4BC30FD-S | INSULATED GATE BIPOLAR TRANSISTOR
PD - 96929
IRG4BC30FD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
C
Fast CoPack IGBT
VCES = 600V
Features
Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parame |
International Rectifier |
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3 | IRG4BC30FD1 | INSULATED GATE BIPOLAR TRANSISTOR PD - 94773
IRG4BC30FD1
Fast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
C
Features
Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficie |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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