|
|
Datasheet IRFWZ24 Equivalent ( PDF ) - MOSFET |
| P/N | Descripción | Fabr. | |
| IRFWZ24 | Power MOSFET, Transistor Advanced Power MOSFET
IRFWZ24
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175°C Operating Temperature Lower Leakage Current: 10 A (Max.) @ VDS = 60V Lower RDS(ON): 0.050Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv, dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-So
|
![]() |
|
| IRFWZ24A | Power MOSFET, Transistor Advanced Power MOSFET
IRFW, IZ24A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv, dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-So
|
![]() |
IRFW Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| IRFW644A | (IRFI644A / IRFW644A) Advanced Power MOSFET
| ![]() |
|
| IRFW820A | Advanced Power MOSFET
| ![]() |
|
| IRFW550A | (IRFI550A / IRFW550A) Advanced Power MOSFET
| ![]() |
|
| IRFW740A | Advanced Power MOSFET
| ![]() |
|
| IRFW540A | Advanced Power MOSFET
| ![]() |
|
| IRS29831 | 700V / LED FLYBACK CONTROL IC
| ![]() |
|
| IRS2101 | HIGH AND LOW SIDE DRIVER
| ![]() |
| Esta página es del resultado de búsqueda del IRFWZ24. Si pulsa el resultado de búsqueda de IRFWZ24 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
| P/N | Descripción | Fabr. | |
| 2N3904 | NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects. |
![]() |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |