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Samsung IRFS9630
Power Field-Effect Transistor, 4.4A I(D), 200V, 1.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,...
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Datasheet IRFS9630 Equivalent ( PDF ) - MOSFET

P/N Descripción Fabr. PDF
IRFS9630 Advanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V Low RDS(ON) : 0.581 Ω (Typ.) 1 2 3 SFS9630 BVDSS = -200 V RDS(on) = 0.8 Ω ID = -4.4 A TO-220F 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR
Fairchild Fairchild IRFS9630 datasheet



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P/N Descripción Fabr. PDF
2N3904

NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects.

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