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Descripción |
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IRFS840 |
N-Channel MOSFET
IRFS840(CS840F)
N-Channel MOSFET, N MOS 晶 管
用途:用于高效 DC, DC 和功率 。
Purpose: These devices are well suited for high efficiency switching DC, DC converters and switch mode power supplies.
特点: 低 荷,低反 容, 速度快。
Features: Low gate charge, low crss, fast switching.
限 , Absolute maximum ratings(Ta=25℃)
符
位
Symbol
Rating
Unit
VDSS
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N-CHANNEL MOSFET
IRFS840(BRCS840F)
Rev.C Feb.-2015
DATA SHEET
描述 , Descriptions TO-220F 塑封封 N 道 MOS 效 管。N-CHANNEL MOSFET in a TO-220F Plastic Package.
特征 , Features
低 荷,低反 容, 速度快。 Low gate charge, low crss, fast switching.
用途 , Applications
用于高效 DC, DC 和功率 。 These devices are well suited for high efficiency switching DC, DC converters an
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N-Channel Power MOSFET, Transistor
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IRFS840A |
N-Channel MOSFET Transistor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFS840A
FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
D
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Advanced Power MOSFET
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 Ω (Typ.)
1
IRFS840A
BVDSS = 500 V RDS(on) = 0.85 Ω ID = 4.6 A
TO-220F
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR E
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