Datasheet IRFS630 Equivalent ( PDF ) - MOSFET

200V, 9A POWER MOSFET (N-Channel) IRF630, IRFS630 200V, 9A Power MOSFET (N-Channel) General Description IRF630, IRFS630 are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. TO-220 IRF630, IRFS630 are available in TO-22

IRFS630 Rev.D Mar.-2016 DATA SHEET 描述 , Descriptions TO-220F 塑封封 N 道 MOS 效 管。N-CHANNEL MOSFET in a TO-220F Plastic Package. 特征 , Features 低 荷,低反 容, 速度快。 Low gate charge, low crss, fast switching. 用途 , Applications 用于高效 DC, DC 和功率 。 These devices are well suited for high efficiency switching DC, DC converters and switch m

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS630A FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS D

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.333 Ω (Typ.) 1 IRFS630A BVDSS = 200 V RDS(on) = 0.4 Ω ID = 6.5 A TO-220F 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR