Datasheet IRFP264 Equivalent ( PDF ) - MOSFET

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Standard Power MOSFET IRFP 264 VDSS = 250 V ID (cont) = 38 A RDS(on) = 0.075 Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv, dt PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C IS ≤ IDM, di, dt ≤ 100 A, s, VDD ≤ VDSS, TJ ≤

IRFP264, SiHFP264 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 35 98 Single D FEATURES 250 0.075 Dynamic dV, dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002, 95, EC Available RoHS* COMPLIA

PD - 94214 IRFP264N HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS(on) = 60mΩ G S ID = 44A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

PD - 94811 IRFP264NPbF HEXFET® Power MOSFET Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combin