Datasheet IRFP044 Equivalent ( PDF ) - MOSFET

Power MOSFET IRFP044, SiHFP044 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 95 27 46 Single 0.028 TO-247 D S D G G S N-Channel MOSFET FEATURES Dynamic dV, dt Rating Isolated Central Mounting Hole 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available

PD - 9.1410A IRFP044N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.020Ω G ID = 53A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, co

Lead-Free PD- 95421 IRFP044NPbF www.irf.com 1 06, 14, 04 IRFP044NPbF 2 www.irf.com IRFP044NPbF www.irf.com 3 IRFP044NPbF 4 www.irf.com IRFP044NPbF www.irf.com 5 IRFP044NPbF 6 www.irf.com IRFP044NPbF www.irf.com 7 IRFP044NPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE

Lead-Free PD- 95669 IRFP044PbF www.irf.com 1 8, 2, 04 IRFP044PbF 2 www.irf.com IRFP044PbF www.irf.com 3 IRFP044PbF 4 www.irf.com IRFP044PbF www.irf.com 5 IRFP044PbF 6 www.irf.com IRFP044PbF Peak Diode Recovery dv, dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + - -+ dv, dt controlled by RG ISD cont