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Datasheet IRFN140 Equivalent ( PDF ) - MOSFET |
| P/N | Descripción | Fabr. | |
| IRFN140 | POWER MOSFET N-CHANNEL Previous Datasheet
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Provisional Data Sheet No. PD-9.1546
HEXFET® POWER MOSFET
100 Volt, 0.077Ω HEXFET
HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-establish advantages
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| IRFN140SMD | N-CHANNEL POWER MOSFET
LAB
MECHANICAL DATA Dimensions in mm (inches)
SEME
IRFN140SMD
N CHANNEL POWER MOSFET
3 .6 0 (0 .1 4 2 ) M a x .
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 )
1
3
0 .7 6 (0 .0 3 0 ) m in .
VDSS ID(cont) RDS(on)
FEATURES
100V 13.9A 0.077W
1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
2
1 6 .0 2 (0
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