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Datasheet IRFF320 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRFF320 | 2.5A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET IRFF320
Data Sheet March 1999 File Number 1890.4
2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanch |
 Intersil Corporation |
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| 1 | IRFF320 | HEXFET TRANSISTORS PD -90428D
IRFF320
JANTX2N6792
REPETITIVE AVALANCHE AND dv/dt RATED
JANTXV2N6792
HEXFET®TRANSISTORS
REF:MIL-PRF-19500/555
THRU-HOLE (TO-205AF)
400V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on)
IRFF320
400V 1.8Ω
ID 2.0A
The HEXFET®technology is the key to International Recti |
 International Rectifier |
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