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IRFD220 |
0.8A/ 200V/ 0.800 Ohm/ N-Channel Power MOSFET
IRFD220
Data Sheet July 1999 File Number
2317.3
0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulator
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Power MOSFET(Vdss=200V/ Rds(on)=0.80ohm/ Id=0.80A)
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0.8A/ 200V/ 0.800 Ohm/ N-Channel Power MOSFET
IRFD220
Data Sheet January 2002
0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching con
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IRFD220PBF |
Power MOSFET, Transistor
PD- 95917
IRFD220PbF
Lead-Free
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10, 27, 04
IRFD220PbF
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IRFD220PbF
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IRFD220PbF
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IRFD220PbF
Peak Diode Recovery dv, dt Test Circuit
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Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer
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dv, dt controlled by
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