Datasheet IRF831FI Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF831FI	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF831FI DESCRIPTION ·Drain Current –ID= 3.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) ·Fast Switching Speed ·Simple Drive Requirements APPLI	Inchange Semiconductor

IRF83 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF830	N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET ® IRF830 N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH™ MOSFET TYPE IRF830 s s s s s V DSS 500 V R DS(on) < 1.5 Ω ID 4.5 A TYPICAL RDS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 2 3	STMicroelectronics
IRF830	PowerMOS transistor Avalanche energy rated Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • High thermal cycling performance • Low thermal resistance g IRF830 SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 5.9 A R	NXP Semiconductors
IRF830A	Power MOSFET ( Transistor ) Power MOSFET IRF830A, SiHF830A Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 24 6.3 11 Single 1.4 TO-220AB D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES •	Vaishali Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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