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IRF644 |
Power MOSFET(Vdss=250V/ Rds(on)=0.28ohm/ Id=14A)
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250V N-Channel MOSFET
IRF644B, IRFS644B
November 2001
IRF644B, IRFS644B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avala
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Power MOSFET(Vdss=250V/ Rds(on)=240mohm/ Id=14A)
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Power MOSFET, Transistor
Power MOSFET
IRF644, SiHF644
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) ( ) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
250 VGS = 10 V
68 11 35 Single
0.28
TO-220AB
D
G
S D G
S N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES Dynamic dV, dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Compliant
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IRF644A |
N-Channel Mosfet Transistor
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF644A
·FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Lower Leakage Current: 10mA (Max.) @ VDS = 250V ·Lower RDS(ON): 0.214Ω (Typ.)
·DESCRITION ·Designed especially for high voltage,high speed applications
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