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Datasheet IRF634A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRF634A | Advanced Power MOSFET FEATURES
z Avalanche Rugged Technology z Rugged Gate Oxide Technology z Lower Input Capacitance z Extended Safe Operating Area z Lower Leakage Current:10µA (Max.)@VDS=250V z Lower RDS(ON): 0.327 Ω(Typ.)
IRF634A Advanced Power MOSFET
BVDSS=250V RDS(on)=0.45Ω ID=8.1A TO-220
1. Gate 2. Drain 3.S |
 ART CHIP |
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| 2 | IRF634A | Advanced Power MOSFET $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 0.327Ω (Typ.)
1 2 3
IRF634A
BVDSS = 250 V R |
 Fairchild Semiconductor |
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| 1 | IRF634A | Advanced Power MOSFET
)($785(6
Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*DWHýý&KDUJH Qýýý([WHQGHGýý6DIHýý2SHUDWLQJýý$UHD Qýýý/RZHUýý/HDNDJHýý&XUUHQWýýãýýìíýP$ý |
 Samsung |
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