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Datasheet IRF630F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRF630F | N-Channel MOSFET Transistor MOSFET
INCHANGE
IRF630F
N-channel mosfet transistor
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Features
123
With TO-220F package ¤¡ Low on-stateand thermal resistance ¤¡ Fast switching ¤¡ VDSS=200V; RDS(ON)¡Ü 0.4¦¸ ;ID=9A ¤¡ 1.gate 2.drain 3.source
Absolute Maximum Ratings Tc=25¡æ
SYMBOL VDS |
 Inchange |
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| 3 | IRF630FI | N-CHANNEL MOSFET This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Mater |
 STMicroelectronics |
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| 2 | IRF630FI | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·RDS(on) =0.4Ω ·6A and 200V ·single pulse avalanche energy rated ·SOA is Power- Dissipation Limited ·Linear Transfer Characteristics ·High Input Impedance
isc Product Specification
IRF630FI
·DESCRITION ·Designed for high sp |
 Inchange Semiconductor |
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| 1 | IRF630FP | N-CHANNEL MOSFET IRF630 IRF630FP
N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay™ II Power MOSFET
General features
Type IRF630 IRF630FP
VDSS 200V 200V
RDS(on) <0.40Ω <0.40Ω
■ Extremely high dv/dt capability ■ Very low intrinsic capacitances ■ Gate charge minimized
ID 9A 9A
Description
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STMicroelectronics |
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