Datasheet IRF610A Equivalent ( PDF ) - MOSFET

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF610A FEATURES ·Low RDS(on) = 1.25Ω(TYP) ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Dr

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 1.169 Ω (Typ.) 1 2 3 IRF610A BVDSS = 200 V RDS(on) = 1.5 Ω ID = 3.3 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM Characteristic Dra