Datasheet IRF331 Equivalent ( PDF ) - MOSFET

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF331 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speeds ·IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature ·Rugged APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and s

PD -91623A APPROVED l l l l l IRF3315 D HEXFET® Power MOSFET Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 150V G S RDS(on) = 0.07Ω ID = 27A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefi