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Datasheet IRF121 Equivalent ( PDF ) - MOSFET |
| P/N | Descripción | Fabr. | |
| IRF121 | N-Channel Power MOSFETs/ 11 A/ 60-100 V |
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| N-CHANNEL POWER MOSFETS |
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| 8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs Semiconductor
IRF120, IRF121, IRF122, IRF123
8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are design
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| N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF121
DESCRIPTION ·Drain Current ID=8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.3Ω(Max) ·Nanosecond Switching Speeds
APPLICATIONS ·Switching power supplies ·Motor controls,Inverters and Choppers ·Audio amplifiers and high energy pulse circuits.
ABSO
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| Trans MOSFET N-CH 80V 9.2A 3-Pin(2+Tab) TO-3 |
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IRF1 Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| IRF101 | N-Channel Power MOSFETs/ 27 A/ 60-100V
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| IRF1010E | Power MOSFET(Vdss=60V/Rds(on)=12mohm/Id=84A
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| IRF1010EL | Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
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| IRF1010ES | Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
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| IRF1010N | Power MOSFET(Vdss=55V/ Rds(on)=11mohm/ Id=85A)
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| IRS29831 | 700V / LED FLYBACK CONTROL IC
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| IRS2101 | HIGH AND LOW SIDE DRIVER
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nuevas actualizaciones
| P/N | Descripción | Fabr. | |
| 2N3904 | NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects. |
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