Datasheet IRF054 Equivalent ( PDF ) - Transistor

PD - 90640 REPETITIVE A V ALANCHE AND dv, dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA, AE) Product Summary Part Number BVDSS RDS(on) IRF054 60V 0.022Ω ID 45A* IRF054 60V, N-CHANNEL The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF054 DESCRIPTION ·Drain Current ID=45A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power supplies ·Motor controls,Inverters and Choppers ·Audio amplifiers and high energy pulse circuits. ABS

LAB MECHANICAL DATA Dimensions in mm (inches) SEME IRF054SMD N CHANNEL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M a x . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 3 0 .7 6 (0 .0 3 0 ) m in . VDSS ID(cont) RDS(on) FEATURES 60V 45A 0.027W 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3