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Datasheet IPP70N04S3-07 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IPP70N04S3-07 | Power-Transistor OptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested
IPB70N04S3-07 IPI70N04S3-07, IPP70N04S3-07
Product Summary V DS R |  Infineon Technologies | transistor |
IPP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IPP020N06N | Power-Transistor Type
OptiMOSTM Power-Transistor
Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to  Infineon transistor | | |
| 2 | IPP020N08N5 | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSª5Power-Transistor,80V IPP020N08N5
DataSheet
Rev.2.1 Final
PowerManagement&Multimarket
1Description
Features
•Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM Infineon mosfet | | |
| 3 | IPP023N04NG | Power-Transistor Ie]R
"%&$!"#™3 Power-Transistor
Features Q& ( , - 7@B( + :? 8 2 ? 5 . ? :? D6BBEAD:3 =6 ) @G6B, EAA=I Q* E2 =:7:65 2 44@B5:? 8 D@ $ )# 7@BD2 B86D2 AA=:42 D:@? C
Q' 492 ? ? 6= Q' @B> 2 ==6F6= Q. =DB2 =@G @? B6C:CD2 ? 46 R 9H"\[# Q
F2 =2 ? 496 D6CD65 Q) 3 7B66 A=2 D:? 8 + @" Infineon Technologies transistor | | |
| 4 | IPP023N08N5 | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSª5Power-Transistor,80V IPP023N08N5
DataSheet
Rev.2.0 Final
PowerManagement&Multimarket
1Description
Features
•Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM Infineon mosfet | | |
| 5 | IPP023N10N5 | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSª5Power-Transistor,100V IPP023N10N5
DataSheet
Rev.2.1 Final
PowerManagement&Multimarket
OptiMOSª5Power-Transistor,100V IPP023N10N5
1Description
Features
•N-channel,normallevel •OptimizedforFOMOSS Infineon mosfet | | |
| 6 | IPP023NE7N3G | Power-Transistor "%&$!"#B< # : A 0<& <,9=4=>: <
6LHZ[XLY Q( @D9=9J54 D53 8>? 3 8B? >? ECB53 D9693 1D9? > Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 3 ? >F5BD5BC Q H3 5<<5>D71D5 3 81B75 H' 9H"[Z# @B? 4E3 D ( &
# <: /?.>% ?8 8 , Infineon transistor | | |
| 7 | IPP024N06N3G | Power-Transistor Ie\Q
"%&$!"#™3 Power-Transistor
Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI B5C9CD1>3 5 + 9H"[Z# Q' 3 81>>5< >? B=1<<5F5< Q
1F1<1>3 85 D5CD54 Q) 2 6 Infineon Technologies transistor | | |
| 8 | IPP027N08N5 | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSª5Power-Transistor,80V IPP027N08N5
DataSheet
Rev.2.0 Final
PowerManagement&Multimarket
1Description
Features
•Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM Infineon mosfet | | |
| 9 | IPP029N06N | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-Transistor,60V IPP029N06N
DataSheet
Rev.2.6 Final
PowerManagement&Multimarket
1Description
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermal Infineon mosfet | |
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