Datasheet IPB Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
295	IPB009N03LG	MOSFET ( Transistor ) IPB009N03LG MOSFET OptiMOSª3Power-Transistor,30V Features •MOSFETforORingandUninterruptiblePowerSupply •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •Ultra-lowon-resistanceRDS(on) •100%Avalanchetested •Pb-freeplating;RoHScomp	Infineon Technologies
294	IPB010N06N	MOSFET ( Transistor ) IPB010N06N MOSFET OptiMOSTMPower-Transistor,60V Features •Optimizedforsynchronousrectification •100%avalanchetested •Superiorthermalresistance •N-channel,normallevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Hal	Infineon
293	IPB011N04LG	OptiMOS3 Power Transistor Jf^S $ " "%&$!"#E $ ;B 1= '= -: >5 >? ;= 6MI[YMZ R' ) - . 8 AC ) ,; @9 3 @6 / @; @E 7C C FBE ; 4> 7 * AH7C - FBB> J R + F3 > ; 8 ; 76 3 55AC 6; @9 E A$ R( 5: 3 @@7> R& A9; 5> 7G 7> R/ > E C 3 > AH A@ C 7D ; D E 3 @57 ' 9I"]# )# $= ;0@/?& @9 9 -= D ) 9I ' - A@?	Infineon Technologies
292	IPB011N04NG	OptiMOS3 Power Transistor Ie]R # ! ! "%&$!"#D # : A 0< & < ,9=4 => :< 6LHZ[XLY Q& ( , - 7 @B ( + :? 8 2 ? 5 . ? :? D 6B B EAD :3 = 6 ) @G6B , EAA= I Q * E2 = :7 :65 2 44@B 5:? 8 D @ $ Q' 492 ? ? 6= Q' @B >2 = = 6F 6= Q. = D B 2 = @G @? B 6C :C D 2 ? 46 ' 9H"[# Q F 2= 2 ? 496 B 2D 65 Q ) 3 7	Infineon Technologies

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Número de pieza	Descripción	Fabricantes	PDF
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